1N82AG Diode Electrical characteristics

IN82AG

General Description:
The BBI1 type IN82A (G) is a silicon point diode designed especially for frequency mixer applications to 1000 MHz. The 1N82A(G) is packaged in the JEDECO-7 and is electrically the same as the 1N82A. Connecticut Microwave then packages the diode in a field replaceable cartridge.

ABSOLUTE MAXIMUM RATINGS AT 25 DEGREES c:

Operating frequency                   0-1000 MHz
Local Oscillator Drive               25ma

Peak Reverse Voltage                       -5 volts

Operating Temperature              -55 degrees to + 100 degrees C

Storage Temperature             100 degrees C

Power Dissipation                            100 mw

ELECTRICAL CHARACTERISTICS AT 12 degrees C:

Min.                         Typ.                         Max                         Unit

Overall Noise Factor (type 1N82A), ONF            -                      -                       13                    DB

Forward Current, 1 R
VR - 0.5 V In82AG                                               9                     -                      -                      ma

Reverse Current, 1 R
VR = 3V                                                         -                       -                       1000               ua

VR = 0.4 Type 1N82AG                                 -                       -                       50                    ua

ONF TEST CONDITIONS:

Test Frequency                                          890 MHz

Local Oscillator drive (average)                   2.0 ma ..

DC Load (crystal current meter)                         10 ohms

Pre-amplifier Noise factor                           4.5 db

General Note: In soldering, the temperature of the internal structure must not be b permitted to exceed the maximum rated temperature. C

Limits shown are subject to applicable AOL and inspection levels.